Invited Speakers
Below is a list of invited speakers:
- Kostya Novoselov, University of Manchester (UK)
- Mikhail Katsnelson, University of Nijmegen (NL)
Graphene: CERN at the desk - Andrea Ferrari, University of Cambridge (UK)
Raman spectroscopy and photonics of graphene. - Alain Pénicaud, CNRS Bordeaux (FR)
Graphene solutions. - Christos Dimitrakopoulos, IBM Research, Yorktown Heights, NY (US)
Wafer-scale growth of high-quality epitaxial graphene on SiC for high frequency applications - Marco Polini, CNR, Istituto di Nanoscienze and Suola Normale di Pisa (IT)
Drude weight and plasmon dispersion in doped graphene sheets - Silvano Lizzit, Elettra, Trieste (IT)
Graphene on metal surfaces: growth and electronic properties - Luciano Colombo, University of Cagliari (IT)
Elastic properties of hydrogenated graphene - Ivana Vobornik, CNR, Istituto Officine Materiali - IOM Trieste (IT)
Electronic properties of graphene on metallic and semiconducting surfaces. - Rocco Martinazzo, University of Milano (IT)
The effect of atomic-scale defects and dopants on graphene electronic structure - Filippo Giannazzo, CNR-IMM Catania (IT)
Electronic properties of graphene with nanoscale lateral resolution - Alberto Morpurgo, University of Geneva (CH)
Dirac fermions in graphene and topological insulators. - Walter Escoffier, CNRS LNCMI Tolosa (FR)
High field quantum Hall effect in disordered graphene near the Dirac point - Camilla Coletti, Max Planck Institut, Stuttgart (GER)
Tailoring the electronic structure of epitaxial graphene on SiC(0001): transfer doping and hydrogen intercalation - Pasqualantonio Pingue, Laboratorio NEST - Scuola Normale Superiore, Pisa (IT)
Graphene@NEST: Ongoing research activities on graphene and artificial graphene - Costas Galiotis, FORTH/ICE-HT (GR)
Deforming single and multi-layer graphenes in tension and compression - Alexander Tzalenchuk, National Physical Laboratory Teddington, London (UK)
Graphene: settings new standards - Karsten Horn, Max Planck Institut, Berlin (GER)
Graphene - an experimental view on its electronic structure using angle-resolved photoemission